Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)

文件：281.43 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET짰Power MOSFET

Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss Specified ( See AN 1001) ● Lead -Free Applications ● Switch Mode Power Supply ( SMPS

文件：194.42 Kbytes 页数：8 Pages

IRF

Power MOSFET

文件：354.64 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Square Type

文件：31.78 Kbytes 页数：1 Pages

PANASONIC

松下

Square Type

文件：31.83 Kbytes 页数：1 Pages

PANASONIC

松下

NPN Silicon RF Transistor

DESCRIPTION The START450 is a member of the START family that provide the state of the art of RF silicon process to the market. Manufacturated in the third generation of ST proprietary bipolar process, it offers the best mix of gain and NF for given breakdown voltage(BVceo). It offers performance

文件：70.33 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体