PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The IRFP460 is supplied i

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PHI

飞利浦

20A, 500V, 0.270 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

文件：55.75 Kbytes 页数：7 Pages

Intersil

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude t

文件：135.66 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

MegaMOS - Power MOSFET

MegaMOS™ Power MOSFET N-Channel Enhancement Mode, HDMOS™ Family Features ● Repetitive avalanche energy rated ● Fast switching times ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● High Commutating dv/dt Rating Applications ● Switching Power Supplies ● Motor contr

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IXYS

艾赛斯

Power MOSFET(Vdss=500V, Rds(on)=0.27ohm, Id=20A)

Features ● Dynamic dv/dt Rating ● Repetitive Avalanche Rated ● Isolated Central Mouting Hole ● Fast Switching ● Ease of Paralleling ● Simple Drive Requirements.

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IRF

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 20A@ TC=25℃ • Drain Source Voltage- : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.27Ω(Max) • Fast Switching

文件：67.9 Kbytes 页数：2 Pages

ISC

无锡固电

N - CHANNEL 500V - 0.22 ohm - 20 A - TO-247 PowerMESH] MOSFET

DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. ■ TYPICAL RDS(on) = 0.22 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100 AVALA

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STMICROELECTRONICS

意法半导体

SEMICONDUCTORS

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ETCList of Unclassifed Manufacturers

未分类制造商

Power MOSFET

文件：169.48 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件：203.58 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世威世科技公司