AUTOMOTIVE MOSFET (VDSS = 75V , RDS(on) = 4.5m廓 , ID = 209A)

Description This Stripe Planar design of HEXFET®Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitiv

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Advanced Process Technology

文件：224.07 Kbytes 页数：9 Pages

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Advanced Process Technology

文件：224.07 Kbytes 页数：9 Pages

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AUTOMOTIVE MOSFET

VDSS = 75V RDS(on) = 4.5mΩ ID = 90A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction

文件：311.77 Kbytes 页数：9 Pages

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N-Channel MOSFET Transistor

文件：335.09 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET Power MOSFET

VDSS = 75V RDS(on) = 4.5mΩ ID = 90A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp

文件：268.69 Kbytes 页数：9 Pages

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