23A, 400V, 0.200 Ohm, N-Channel Power MOSFET

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching c

文件：55.31 Kbytes 页数：7 Pages

Intersil

Power MOSFET

FEATURES • Dynamic dV/dt rated • Repetitive avalanche rated • Isolated central mounting hole • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides info

文件：284.4 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世科技

MegaMOS FET

Features • Fast switching times • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • High commuting dv/dt rating Applications • DC choppers • Motor Controls • Switch-mode and resonant-mode • Uninterruptable power supplies (UPS) Adva

文件：50.32 Kbytes 页数：2 Pages

IXYS

艾赛斯

Power MOSFET(Vdss=400V, Rds(on)=0.20ohm, Id=23A)

文件：164.15 Kbytes 页数：6 Pages

IRF

isc N-Channel MOSFET Transistor

FEATURES • Drain Current –ID= 23A@ TC=25℃ • Drain Source Voltage- : VDSS= 400V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) • Fast Switching DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications.

文件：67.83 Kbytes 页数：2 Pages

ISC

无锡固电

Avalanche-Energy-Rated N-Channel Power MOSFETs

The IRFP360 and IRFP362 are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of opera tion These are n-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching re

文件：640.42 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Power MOSFET

文件：1.032369 Mbytes 页数：11 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

文件：962.94 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

23A, 400V, 0.200 Ohm, N-Channel Power MOSFET

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching con • 23A, 400V\n• rDS(ON) = 0.200Ω\n• Single Pulse Avalanche Energy Rated\n• SOA is Power Dissipation Limited\n• Nanosecond Switching Speeds\n• Linear Transfer Characteristics\n• High Input Impedance\n• Related Literature\n   - TB334 “Guidelines for Soldering Surface Mount\n      Components to PC Board;

Renesas

瑞萨

N-Channel: Standard Power MOSFETs

·Breakdown voltages (VDSS) up to 4500V\n·Current ratings (ID25) ranging from 100mA to 250A\n·Ultra-low RDS(on) - as low as 7.5 milliohm\n·High power density\n·Easy to mount\n·PCB space savings\n·International standard and proprietary high voltage packages;

Littelfuse

力特