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IRFP360中文资料23A, 400V, 0.200 Ohm, N-Channel Power MOSFET数据手册Renesas规格书

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厂商型号

IRFP360

功能描述

23A, 400V, 0.200 Ohm, N-Channel Power MOSFET

制造商

Renesas Renesas Technology Corp

中文名称

瑞萨 瑞萨科技有限公司

数据手册

下载地址下载地址二

更新时间

2025-9-23 17:01:00

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IRFP360规格书详情

描述 Description

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.

特性 Features

• 23A, 400V
• rDS(ON) = 0.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount
      Components to PC Boards”

技术参数

  • 型号:

    IRFP360

  • 功能描述:

    MOSFET N-Chan 400V 23 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

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