IRFP360中文资料23A, 400V, 0.200 Ohm, N-Channel Power MOSFET数据手册Renesas规格书
IRFP360规格书详情
描述 Description
This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.
特性 Features
• 23A, 400V
• rDS(ON) = 0.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
技术参数
- 型号:
IRFP360
- 功能描述:
MOSFET N-Chan 400V 23 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SILICONIXVISHAY |
21+ |
NA |
5000 |
百域芯优势 实单必成 可开13点增值税 |
询价 | ||
IR/国际整流器 |
24+ |
TO-247 |
30000 |
原装正品公司现货,假一赔十! |
询价 | ||
IR |
2450+ |
TO-3P |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
IR |
5 |
公司优势库存 热卖中!! |
询价 | ||||
IR/国际整流器 |
21+ |
TO-247 |
10000 |
只做原装,质量保证 |
询价 | ||
INTERSIL |
25+ |
TO-3P |
3000 |
全新原装、诚信经营、公司现货销售 |
询价 | ||
HAR |
24+ |
SOT |
39 |
询价 | |||
IR |
TO-247 |
3200 |
原装长期供货! |
询价 | |||
IR |
25+ |
管3P |
18000 |
原厂直接发货进口原装 |
询价 | ||
IR |
24+ |
TO247 |
37935 |
郑重承诺只做原装进口现货 |
询价 |