| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IRFP240 | 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  | |
IRFP240 | Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=20A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevels | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  | |
IRFP240 | Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclu | VishayVishay Siliconix 威世科技 |  | |
IRFP240 | isc N-Channel MOSFET Transistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •DrainCurrent–ID=20A@TC=25℃ •DrainSourceVoltage-:VDSS=200V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=0.18Ω(Max) •FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IRFP240 | Power MOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Isolatedcentralmountinghole •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf | VishayVishay Siliconix 威世科技 | | |
IRFP240 | Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludet | KERSEMI Kersemi Electronic Co., Ltd. |  | |
IRFP240 | Power MOSFET | VishayVishay Siliconix 威世科技 | | |
IRFP240 | Power MOSFET | VishayVishay Siliconix 威世科技 | | |
IRFP240 | isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
Power MOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Isolatedcentralmountinghole •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf | VishayVishay Siliconix 威世科技 | | ||
Advanced Power MOSFET BVDSS=200V RDS(on)=0.18Ω ID=20A FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea LowerLeakageCurrent:10µA(Max.)@VDS=200V LowerRDS(ON):0.144Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage-:VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance:RDS(on)=0.18Ω(Max) ·FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
200V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=12A@TC=25℃ ·DrainSourceVoltage-:VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance:RDS(on)=0.18Ω(Max) ·FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclu | VishayVishay Siliconix 威世科技 | | ||
HEXFET짰 Power MOSFET .VDSS=200V,RDS(on)=0.18Ohm,ID=20A Lead-Free | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludet | KERSEMI Kersemi Electronic Co., Ltd. | | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage-:VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance:RDS(on)=0.18Ω(Max) ·FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
Power MOSFET | VishayVishay Siliconix 威世科技 | | ||
isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |
详细参数
- 型号：
IRFP240
- 功能描述：
MOSFET N-Chan 200V 20 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HARRIS哈里斯 |
23+ |
管3P |
18000 |
询价 | |||
IR |
23+ |
TO-247AC |
19526 |
询价 | |||
IR |
06+ |
TO-247 |
1000 |
全新原装 绝对有货 |
询价 | ||
IR |
15+ |
TO-247 |
11560 |
全新原装,现货库存,长期供应 |
询价 | ||
TR |
1635+ |
6000 |
好渠道!好价格!一片起卖! |
询价 | |||
HAR |
98+ |
SOT |
87 |
询价 | |||
IR |
2015+ |
TO-247AC |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
IR |
16+ |
原厂封装 |
1367 |
原装现货假一罚十 |
询价 | ||
VISHAY |
23+ |
TO247 |
8653 |
全新原装优势 |
询价 | ||
IR |
2017+ |
TO-247 |
25586 |
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增 |
询价 |
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