IRFP250

N-CHANNEL 200V - 0.073ohm - 33A TO-247 PowerMesh II MOSFET

DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=0.

IRFP250

N-Channel Power Mosfets

IRFP250

200V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planar,DMOStechnology. Features •32A,200V,RDS(on)=0.085Ω@VGS=10V •Lowgatecharge(typical95nC) •LowCrss(typical75pF) •Fastswitching •100ava

IRFP250

N-Channel(Hexfet Transistors)

IRFP250

Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFP250

Standard Power MOSFET

N-ChannelEnhancementMode Features •InternationalstandardpackageJEDECTO-247AD •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Highcommutatingdv/dtrating •Fastswitchingtimes Applications •Switch-modeandresonant-modepowersupplies •Motorcontrols

IRFP250

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

FEATURES: •Fastswitchingtimes •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Excellenthighvoltagestability •Lowinputcapacitance •Improvedhightemperaturereliability APPLICATIONS: •Switchingpowersupplies •Motorcontrols •AudioAmplifiers •Invert

IRFP250

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheTO-220packageisuniversiallypreferredforcommercial-industrialapplicationswherehigherpowerleve

IRFP250

iscN-Channel MOSFET Transistor

DESCRIPTION ·Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ·DrainCurrent–ID=33A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.085Ω(Max) ·FastSwitching

IRFP250

Power MOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Isolatedcentralmountinghole •Fastswitching •EaseofParalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf

IRFP250

ThinkiSemi 200V,32A N-Channel Planar Process Power MOSFETs

IRFP250

SEMICONDUCTORS

IRFP250

Power MOSFET

IRFP250

Power MOSFET

IRFP250_V02

Power MOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Isolatedcentralmountinghole •Fastswitching •EaseofParalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf

IRFP250A

Advanced Power MOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowRDS(ON):0.071Ω(Typ.)

IRFP250A

isc N-Channel MOSFET Transistor

DESCRIPTION ·Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ·DrainCurrent–ID=32A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.085Ω(Max) ·FastSwitching

IRFP250B

200V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planar,DMOStechnology. Features •32A,200V,RDS(on)=0.085Ω@VGS=10V •Lowgatecharge(typical95nC) •LowCrss(typical75pF) •Fastswitching •100ava

IRFP250MPBF

IR MOSFET?

Features AdvancedProcessTechnology Dynamicdv/dtRating 175°COperatingTemperature FastSwitching FullyAvalancheRated EaseofParalleling SimpleDriveRequirements Lead-Free Description IRMOSFET™technologyfromInfineonutilizes advancedprocessingtechniquesto

IRFP250N

Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide