Advanced Process Technology, Dynamic dv/dt Rating

文件：1.14705 Mbytes 页数：8 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：1.14705 Mbytes 页数：8 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：1.14705 Mbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=100V, Rds(on)=0.035W, Id=42A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：135.04 Kbytes 页数：8 Pages

IRF

44A, 100V, 0.030 Ohm, N-Channel Power MOSFET

Features • Ultra Low On-Resistance -rDS(ON)= 0.030Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models • Peak Current vs Pulse Width Curve • UIS Rating Curve

文件：148.84 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

文件：243.86 Kbytes 页数：2 Pages

ISC

无锡固电