N-CHANNEL POWER MOSFETS

FEATURES ● Low RDS(on) ● Improved Inducttive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3P package

文件：215.5 Kbytes 页数：5 Pages

SAMSUNG

三星

16A, 400V, 0.300 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

文件：57.28 Kbytes 页数：7 Pages

INTERSIL

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inf

文件：877.55 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=400V, Rds(on)=0.30ohm, Id=16A)

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels

文件：161.9 Kbytes 页数：6 Pages

IRF

N-Channel Power Mosfet

文件：637.84 Kbytes 页数：6 Pages

ARTSCHIP

isc N-Channel MOSFET Transistor

文件：67.81 Kbytes 页数：2 Pages

ISC

无锡固电

SEMICONDUCTORS

文件：2.43533 Mbytes 页数：31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Power MOSFET

文件：1.56932 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.5891 Mbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.61166 Mbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司