| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IRFP350 | 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  | |
IRFP350 | Power MOSFET(Vdss=400V, Rds(on)=0.30ohm, Id=16A) DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevels | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  | |
IRFP350 | N-CHANNEL POWER MOSFETS FEATURES ●LowRDS(on) ●ImprovedInducttiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3Ppackage | SamsungSamsung Group 三星三星半导体 |  | |
IRFP350 | Power MOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Isolatedcentralmountinghole •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf | VishayVishay Siliconix 威世科技 |  | |
IRFP350 | Power MOSFET | VishayVishay Siliconix 威世科技 | | |
IRFP350 | isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IRFP350 | N-Channel Power Mosfet | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. |  | |
IRFP350 | Power MOSFET | VishayVishay Siliconix 威世科技 | | |
IRFP350 | SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc2未分类制造商 |  | |
IRFP350 | Power MOSFET | VishayVishay Siliconix 威世科技 | | |
Power MOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Isolatedcentralmountinghole •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf | VishayVishay Siliconix 威世科技 | | ||
Advanced Power MOSFET FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=400V ♦LowRDS(ON):0.254Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | ||
isc N-Channel MOSFET Transistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •DrainCurrent–ID=17A@TC=25℃ •DrainSourceVoltage- :VDSS=400V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) •FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
Power MOSFET(Vdss=400V, Rds(on)=0.30ohm, Id=16A) Description ThisnewseriesofLowChargeHEXFETPowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHexfettechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
Power MOSFET FEATURES •Ultralowgatecharge •Reducedgatedriverequirement •Enhanced30VGSrating •ReducedCiss,Coss,Crss •Isolatedcentralmountinghole •DynamicdV/dtrated •Repetitiveavalancherated •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc? | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET FEATURES •Ultralowgatecharge •Reducedgatedriverequirement •Enhanced30VGSrating •ReducedCiss,Coss,Crss •Isolatedcentralmountinghole •DynamicdV/dtrated •Repetitiveavalancherated •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc? | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET | VishayVishay Siliconix 威世科技 | | ||
isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
Power MOSFET | VishayVishay Siliconix 威世科技 | |
详细参数
- 型号：
IRFP350
- 功能描述：
MOSFET N-Chan 400V 16 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HARRIC |
TO-3P |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
询价 | |||
IR |
1912+ |
1025 |
16850 |
全新原装优势绝对有货,价格谈到可以做到 |
询价 | ||
IR |
24+ |
TO 3P |
160993 |
明嘉莱只做原装正品现货 |
询价 | ||
IR |
05+ |
TO-247 |
2000 |
自己公司全新库存绝对有货 |
询价 | ||
IR |
2017+ |
TO-247 |
25586 |
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增 |
询价 | ||
HARRIS |
99+ |
TO-3P |
14 |
询价 | |||
IR |
2015+ |
TO-247AC |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
IR |
2016+ |
TO-247 |
6528 |
房间原装进口现货假一赔十 |
询价 | ||
IR |
23+ |
TO-3P |
9896 |
询价 | |||
HAR |
23+ |
TO-247 |
7750 |
全新原装优势 |
询价 |
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