Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniq

文件：1.03697 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power

文件：174.72 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-1.8A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave solderin

文件：222.81 Kbytes 页数：8 Pages

IRF

Repetitive Avalanche Rated

Description The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-andplace as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enla

文件：790.32 Kbytes 页数：8 Pages

KERSEMI

-60V P-Channel MOSFET

Description The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pickand- place as with other SOT or SOP packages but has the added advantage of improved thermal performance due to

文件：399.22 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

Power MOSFET

文件：177.41 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

丝印：IRFL9014；Package：SOT-223；-60V P-Channel MOSFET

Description The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pickand- place as with other SOT or SOP packages but has the added advantage of improved thermal performance due to

文件：399.22 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-1.8A)

Infineon

英飞凌

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power

文件：174.72 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

HEXFET짰 Power MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave solderin

文件：258.22 Kbytes 页数：8 Pages

IRF