Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

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ADVANCED PROCESS TECHNOLOGY

文件：1.54744 Mbytes 页数：9 Pages

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ADVANCED PROCESS TECHNOLOGY

文件：1.54744 Mbytes 页数：9 Pages

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HEXFET Power MOSFET

文件：1.76262 Mbytes 页数：8 Pages

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Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude t

文件：1.996 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=57A)

Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels

文件：170.96 Kbytes 页数：6 Pages

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