Power MOSFET

DESCRIPTION Third Generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclud

文件：1.66112 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

MOSFET N-CH500V HEXFET MOSFET

Vishay

威世

SPECIFICATIONS FOR SAW FILTER(BAND PASS FILTERS FOR THE RECEIVING RF CIRCUITS OF TRANSCEIVER)

文件：251.27 Kbytes 页数：2 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. • Specified 50 Volt, 30 MHz Characteristics Output Power = 250 W Minimum Gain = 12 dB Effic

文件：108.45 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1731 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ■ OPTIMIZED FOR SSB ■ 30 MHz ■ 50 VOLTS ■ EFFICIENCY 40 ■ COMMON EMITTER ■ GOLD METALLIZATION

文件：58.99 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体