HEXFET Power MOSFET

Benefits ● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability ● Lead-Free Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Pow

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High Efficiency Synchronous Rectification in SMPS

文件：305.33 Kbytes 页数：8 Pages

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High Efficiency Synchronous Rectification in SMPS

文件：305.33 Kbytes 页数：8 Pages

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HEXFET Power MOSFET

Benefits • Worldwide Best RDS(on) in TO-220 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche SOA • Enhanced body diode dV/dt and dI/dt Capability Applications • High Efficiency Synchronous Rectification in SMPS • Uninterruptible Power S

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Isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 130A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.0mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching

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ISC

无锡固电

HEXFET짰Power MOSFET

Benefits • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche SOA • Enhanced body diode dV/dt and dI/dt Capability • Lead-Free Applications • High Efficiency Synchronous Rectification in SMPS • Uninterruptible Power Supply • High Speed Pow

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