Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=57A)

Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels

文件：170.96 Kbytes 页数：6 Pages

IRF

N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

文件：14.22 Kbytes 页数：2 Pages

SEME-LAB

Simple Drive Requirements

文件：161.14 Kbytes 页数：7 Pages

IRF

N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

文件：14.59 Kbytes 页数：2 Pages

SEME-LAB