HEXFET Power MOSFET

文件：283.18 Kbytes 页数：8 Pages

IRF

High Efficiency Synchronous Rectification in SMPS

文件：288.71 Kbytes 页数：8 Pages

IRF

High Efficiency Synchronous Rectification in SMPS

文件：288.71 Kbytes 页数：8 Pages

IRF

HEXFET Power MOSFET

Benefits ● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Power Switching

文件：409.06 Kbytes 页数：11 Pages

IRF

Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：189.28 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET Power MOSFET

Benefits ● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability ● Lead-Free Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Pow

文件：796.58 Kbytes 页数：11 Pages

IRF