HEXFET Power MOSFET

Benefits ● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability ● Lead-Free Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Pow

文件：796.58 Kbytes 页数：11 Pages

IRF

High Efficiency Synchronous Rectification in SMPS

文件：805.55 Kbytes 页数：12 Pages

IRF

High Efficiency Synchronous Rectification in SMPS

文件：805.55 Kbytes 页数：12 Pages

IRF

PC Card and OHCI Controller

文件：841.72 Kbytes 页数：201 Pages

TI

德州仪器

PC Card and OHCI Controller

文件：841.72 Kbytes 页数：201 Pages

TI

德州仪器

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: Si4410DY in SOT96-1 (SO8). Features ■ Low on-state resistance ■ Fast switching ■ TrenchMOS™ technology. Applications ■ DC to DC convertor

文件：266.95 Kbytes 页数：13 Pages

PHI

PHI