| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRFL024Z | HEXFET Power MOSFET VDSS = 55V RDS(on) = 57.5mΩ ID = 5.1A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 150°C junction op 文件：269.18 Kbytes 页数：10 Pages | IRF | IRF | |
HEXFET Power MOSFET VDSS = 55V RDS(on) = 57.5mΩ ID = 5.1A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 150°C junction op 文件：191.38 Kbytes 页数：10 Pages | IRF | IRF | ||
Advanced Process Technology 文件：269.75 Kbytes 页数：10 Pages | IRF | IRF | ||
Advanced Process Technology 文件：269.75 Kbytes 页数：10 Pages | IRF | IRF | ||
Advanced Process Technology 文件：269.75 Kbytes 页数：10 Pages | IRF | IRF | ||
IRFL024Z | 55V 单个 N 通道 HEXFET Power MOSFET, 采用 SOT-223 封装 \n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 快速开关\n• 175°C 的工作温度; | Infineon 英飞凌 | Infineon |
技术参数
- OPN：
IRFL024ZTRPBF
- Qualification：
Non-Automotive
- Package name：
SOT223
- VDS max：
55 V
- RDS (on) @10V max：
57.5 mΩ
- ID @25°C max：
5.1 A
- QG typ @10V：
9.1 nC
- Special Features：
Small Power
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET™
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
SOT-223 |
9320 |
绝对原装现货,价格低,欢迎询购! |
询价 | ||
IOR |
24+ |
SOT-223-3 |
1800 |
询价 | |||
IR |
12+ |
SOT-223 |
15000 |
全新原装,绝对正品,公司现货供应。 |
询价 | ||
IR |
23+ |
TO-223 |
8000 |
原装正品,假一罚十 |
询价 | ||
IR |
23+ |
SOT-223 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IR |
12 |
SOT223 |
6000 |
绝对原装自己现货 |
询价 | ||
IR |
18+ |
SOT-223 |
41200 |
原装正品,现货特价 |
询价 | ||
INFINE0N |
21+ |
SOT-223 |
32568 |
100%进口原装!长期供应!绝对优势价格(诚信经营 |
询价 | ||
IR |
1709+ |
SOT-223 |
32500 |
普通 |
询价 | ||
INFINEON |
25+ |
SOT-223 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 |
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