Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniq

文件：1.03697 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET짰 Power MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave solderin

文件：258.22 Kbytes 页数：8 Pages

IRF

Pre-Amplifier, Low Level & Low Noise

Pre-Amplifier, Low Level & Low Noise • High total power dissipation. (PT = 450mW) • High hFE and good linearity • Complementary to SS9015

文件：38.64 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

Advanced Power MOSFET

FEATURES ❐ Avalanche Rugged Technology ❐ Rugged Gate Oxide Technology ❐ Lower Input Capacitance ❐ Improved Gate Charge ❐ Extended Safe Operating Area ❐ Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ❐ Lower RDS(ON) : 0.362 Ω (Typ.)

文件：258.839 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

Pre-Amplifier, Low Level & Low Noise

Pre-Amplifier, Low Level & Low Noise • High total power dissipation. (PT = 450mW) • High hFE and good linearity • Complementary to SS9015

文件：38.64 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体