SS9014D

Pre-Amplifier, Low Level & Low Noise

Pre-Amplifier,LowLevel&LowNoise •Hightotalpowerdissipation.(PT=450mW) •HighhFEandgoodlinearity •ComplementarytoSS9015

SS9014DBU

Package：TO-226-3，TO-92-3 标准主体（!--TO-226AA）；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 45V 0.1A TO92-3

SS9014DTA

Package：TO-226-3，TO-92-3（TO-226AA）成形引线；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 45V 0.1A TO92-3

ST9014

NPNSiliconEpitaxialPlanarTransistor

forswitchingandAFamplifierapplications. Thetransistorissubdividedintofourgroups,A,B,CandD,accordingtoitsDCcurrentgain.AscomplementarytypethePNPtransistorST9015isrecommended. Onspecialrequest,thesetransistorscanbemanufacturedindifferentpinconfigura

ST9014

TRANSISTOR(NPN)

STC9014

NPNSiliconTransistor

NPNEpitaxialSiliconTransistor AudioFrequencyAmplifier&HighFrequencyOSC. •ComplementtoSTC9015 •Collector-BaseVoltage:VCBO=60V •HighCurrentGainBandwidthProduct:fT=300MHz(TYP) •Suffix“-C”meansCenterCollector(1.Emitter2.Collector3.Base)

STC9014N

NPNSiliconTransistor

Description •Generalpurposeapplication •Switchingapplication Features •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) •ComplementarypairwithSTA9015N

STC9014SF

NPNSiliconTransistor

Description •Generalpurposeapplication •Switchingapplication Features •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) •ComplementarypairwithSTA9015SF

STS9014

NPNSiliconTransistor

STS9014

NPNSiliconTransistor

Description •Generalpurposeapplication •Switchingapplication Features •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) •Lownoise:NF=10dB(Max.)atf=1KHz •ComplementarypairwithSTS9015