Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniq

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VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件：278.12 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件：278.12 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

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Fairchild

仙童半导体

250V N-Channel MOSFET

文件：607.27 Kbytes 页数：8 Pages

Fairchild

仙童半导体

2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are advanced power MOSFETs are designed for use in applications such as switching regulators

文件：52.94 Kbytes 页数：6 Pages

Intersil