Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering tec

文件：1.06848 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET짰 Power MOSFET

VDSS = 200V, RDS(on) = 1.5 Ohm, ID = 0.96A Lead-Free

文件：782.91 Kbytes 页数：9 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering tec

文件：1.06848 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering tec

文件：1.06848 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 200 V (D-S) MOSFET

文件：1.81988 Mbytes 页数：8 Pages

VBSEMI

微碧半导体