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IRFL210TR

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering tec

文件:1.06848 Mbytes 页数:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFL210TRPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering tec

文件:1.06848 Mbytes 页数:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFL210TRPBF-TP

丝印:TPM2006NHK3;Package:TO-252-3L;N-Channel MOSFET 200V, 6.0A, 0.65Q

Features © Vos =200v + o= 60A + Rosin 50650 @Ves = 10V.

文件:992.24 Kbytes 页数:3 Pages

TECHPUBLIC

台舟电子

IRFL210TRPBF

N-Channel 200 V (D-S) MOSFET

文件:1.81988 Mbytes 页数:8 Pages

VBSEMI

微碧半导体

IRFL210TRPBFA

Power MOSFET

文件:171.96 Kbytes 页数:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFL210TRPBF-BE3AB

Power MOSFET

文件:171.96 Kbytes 页数:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

详细参数

  • 型号:

    IRFL210TR

  • 功能描述:

    MOSFET N-Chan 200V 0.96 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
24+
SOT-223
36800
询价
IR
24+/25+
7497
原装正品现货库存价优
询价
INTERNATIONA
05+
原厂原装
522919
只做全新原装真实现货供应
询价
IR
24+
原厂封装
2500
原装现货假一罚十
询价
IR
25+
SOT-223
1400
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
IOR
25+
2987
绝对全新原装现货供应!
询价
IR
23+
SMD-SOT223
9888
专做原装正品,假一罚百!
询价
IR
25+23+
SOT223
6977
绝对原装正品全新进口深圳现货
询价
IR
24+
SOT223
240
现货供应
询价
IR原装
24+
SOT223
30980
原装现货/放心购买
询价
更多IRFL210TR供应商 更新时间2026-4-18 16:30:00