丝印：TPM2006NHK3；Package：TO-252-3L；N-Channel MOSFET 200V, 6.0A, 0.65Q

Features © Vos =200v + o= 60A + Rosin 50650 @Ves = 10V.

文件：992.24 Kbytes 页数：3 Pages

TECHPUBLIC

台舟电子

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

文件：705.26 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Advanced Power MOSFET (200V, 1.5ohm, 0.77A)

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 200V ■ Low RDS(ON) : 1.169 Ω(Typ.)

文件：269.52 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

文件：705.26 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司