200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

文件：705.26 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

200V N-Channel MOSFET

ONSEMI

安森美半导体

Advanced Power MOSFET (200V, 1.5ohm, 0.77A)

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 200V ■ Low RDS(ON) : 1.169 Ω(Typ.)

文件：269.52 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

文件：705.26 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

Advanced Power MOSFET (200V, 1.5ohm, 0.77A)

ONSEMI

安森美半导体