POWER MOSFET N-CHANNEL(BVdss=-100V, Rds(on)=0.20ohm, Id=-18A)

HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, s

文件：215.95 Kbytes 页数：6 Pages

IRF

POWER MOSFET SURFACE MOUNT (SMD-1)

HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, s

文件：174.37 Kbytes 页数：7 Pages

IRF

Simple Drive Requirements

文件：179.96 Kbytes 页数：7 Pages

IRF

HiRel MOSFETs

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Infineon

英飞凌

Simple Drive Requirements

文件：179.96 Kbytes 页数：7 Pages

IRF

P-CHANNEL POWER MOSFET

文件：23.62 Kbytes 页数：2 Pages

SEME-LAB