HIGH VOLTAGE POWER MOSFET DIE

FEATURES: ● Fast switching times ● LOW RDS(on) HDMOS™ process ● Rugged polyslllcon gate cell structure ● Excellent high voltage stability ● Low input capacitance ● Improved high temperature reliability APPLICATIONS ● Switching power supplies ● Motor controls ● Audio Amplifiers ● Inver

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IXYS

艾赛斯

Trans MOSFET 60V 40A 3-Pin(3+Tab) TO-3P

NJS

新泽西半导体

isc N-Channel MOSFET Transistor

文件：69.37 Kbytes 页数：3 Pages

ISC

无锡固电

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast

文件：184.47 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

N-CHANNEL BROADBAND RF POWER MOSFET

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 175 MHz, 50 V: Output P

文件：156.88 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

POWER TRANSISTORS(7A,300-400V,80W)

NPN SILICON POWER DARLINGTON TRANSISTORS . . . designed for use in automotive ignition, switching and motor control applications. FEATURES: ● Collector−Emitter Sustaining Voltage: VCEO(sus) = 300V (Min) - TIP150 = 350V (Min) - TIP151 = 400V

文件：136.96 Kbytes 页数：3 Pages

MOSPEC

统懋