MRF151G

N-CHANNEL BROADBAND RF POWER MOSFET

Designedforbroadbandcommercialandmilitaryapplicationsatfrequenciesto175MHz.Thehighpower,highgainandbroadbandperformanceofthisdevicemakespossiblesolidstatetransmittersforFMbroadcastorTVchannelfrequencybands. •GuaranteedPerformanceat175MHz,50V: OutputP

MRF151G

RF FIELD-EFFECT POWER TRANSISTOR

DESCRIPTION: TheASIMRF151GisaDualCommonSourceN-ChannelEnhancement-ModeMOSFETRFPowerTransistor,Designedfor175MHz,300WTransmitterandAmplifierApplications.

MRF151G

N-CHANNEL BROADBAND RF POWER MOSFET

TheRFMOSFETLine RFPowerField-EffectTransistor N–ChannelEnhancement–ModeMOSFET Designedforbroadbandcommercialandmilitaryapplicationsatfrequenciesto175MHz.Thehighpower,highgainandbroadbandperformanceofthisdevicemakespossiblesolidstatetransmittersforFMbroadcas

MRF151G

RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET

DescriptionandApplications Designedforbroadbandcommercialandmilitaryapplicationsatfrequenciesto175MHz.Thehighpower,highgainandbroadbandperformanceofthisdevicemakespossiblesolidstatetransmittersforFMbroadcastorTVchannelfrequencybands. Features GuaranteedPerf

MRF151G

RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET

MRF151G

Package：375-04；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 2CH 125V 175MHZ 375-04

MACOM Technology Solutions

MRF151G_15

RF Power Field-Effect Transistor

MRF151G_17

RF Power Field-Effect Transistor