MRF151G中文资料1 RF Power MSOFET Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET数据手册MACOM规格书

描述 Description

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

特性 Features

·Guaranteed Performance at 175 MHz, 50 V:
·Nitride Passivated Die for Enhanced Reliability
·Ruggedness Tested at Rated Output Power
·Low Thermal Resistance — 0.35°C/W
·Efficiency — 50%
·Gain — 14 dB (16 dB Typ)
·Output Power — 300 W

应用 Application

·Aerospace and Defense
·ISM