N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast

文件：184.47 Kbytes 页数：8 Pages

Motorola

摩托罗拉

N-CHANNEL BROADBAND RF POWER MOSFET

文件：215.08 Kbytes 页数：8 Pages

MACOM

RF Power Field-Effect Transistor 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET

文件：350.77 Kbytes 页数：8 Pages

MA-COM

RF Power Field-Effect Transistor

文件：350.77 Kbytes 页数：8 Pages

MA-COM

射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Transistor

ASI Semiconductor

N-CHANNEL BROADBAND RF POWER MOSFET

恩XP

RF MOSFET

NJS

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF N-CH 150W 50V 175MHZ

MACOM Technology Solutions

RF Power Field Effect Transistor

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5

文件：472.27 Kbytes 页数：14 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5

文件：471.04 Kbytes 页数：14 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体