RF Power Field Effect Transistor

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5

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freescaleFreescale Semiconductor, Inc

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RF Power Field Effect Transistor

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET The MRF1517 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier appli

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freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

The RF MOSFET Line RF POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETS

The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs The MRF1517T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common

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Motorola

摩托罗拉

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Features • Excellent Thermal Stability • Characterized with Series Equivalent Large-Signal Impedance Parameters • N Suffix Indicates Lead-Free Terminations. RoHS Compliant. • In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel.

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恩XP

RF Power Field Effect Transistor

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 12.

文件：757.51 Kbytes 页数：20 Pages

Motorola

摩托罗拉

RF Power Field Effect Transistor

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 12.

文件：757.51 Kbytes 页数：20 Pages

Motorola

摩托罗拉

The RF MOSFET Line RF POWER FIELD EFFECT TRANSISTOR

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 12.

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Motorola

摩托罗拉

The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET

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MACOM

RF Power Field-Effect Transistor 150W, 50V, 175MHz N-Channel Broadband MOSFET

Description and Applications Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. Features • Enhanced ther

文件：351.16 Kbytes 页数：8 Pages

MA-COM

RF FIELD-EFFECT POWER TRANSISTOR

DESCRIPTION: The ASI MRF151G is a Dual Common Source N-Channel Enhancement-Mode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications.

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ASI