MRF1517T1中文资料飞思卡尔数据手册PDF规格书

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

The MRF1517 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 volt portable FM equipment.

• Specified Performance @ 520 MHz, 7.5 Volts

Output Power — 8 Watts

Power Gain — 11 dB

Efficiency — 55

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Excellent Thermal Stability

• Capable of Handling 20:1 VSWR, @ 9.5 Vdc, 520 MHz, 2 dB Overdrive

• Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request

• Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.