RF Power Field-Effect Transistor 150W, 50V, 175MHz N-Channel Broadband MOSFET

Description and Applications Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. Features • Enhanced ther

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The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET

文件：282.74 Kbytes 页数：8 Pages

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RF Power Field-Effect Transistor 150W, 50V, 175MHz N-Channel Broadband MOSFET

文件：351.16 Kbytes 页数：8 Pages

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RF Power Field-Effect Transistor

文件：351.16 Kbytes 页数：8 Pages

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RF Power Field-Effect Transistor

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MOSFET

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. ·Enhanced Thermal Performance\n·Higher Power Dissipation\n·Guaranteed Performance at 30 MHz, 50 V:, Output Power — 150 W, Gain — 18 dB (22 dB Typ), Efficiency — 40%\n·Typical Performance at 175 MHz, 50 V:, Output Power — 150 W, Gain — 13 dB, Low Thermal Resistance, Ruggedness Tested at Rated Out;

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Package：P-244；包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF N-CH 50V 150W P-244

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