The RF MOSFET Line

RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs

The MRF1517T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 volt portable FM equipment.

• Specified Performance @ 520 MHz, 7.5 Volts

Output Power — 8 Watts

Power Gain — 11 dB

Efficiency — 55

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• Excellent Thermal Stability

• Capable of Handling 20:1 VSWR, @ 9.5 Vdc, 520 MHz, 2 dB Overdrive

• Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request

• RF Power Plastic Surface Mount Package

• Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.