44A, 100V, 0.030 Ohm, N-Channel Power MOSFET

Features • Ultra Low On-Resistance -rDS(ON)= 0.030Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models • Peak Current vs Pulse Width Curve • UIS Rating Curve

文件：148.84 Kbytes 页数：10 Pages

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Power MOSFET(Vdss=100V, Rds(on)=0.035W, Id=42A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：135.04 Kbytes 页数：8 Pages

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Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：1.03047 Mbytes 页数：9 Pages

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IRF

ADVANCED PROCESS TECHNOLOGY

文件：1.03047 Mbytes 页数：9 Pages

IRF

44A, 100V, 0.030 Ohm, N-Channel Power MOSFET

• Ultra Low On-Resistance\n-rDS(ON)= 0.030Ω, VGS = 10V\n• Simulation Models\n- Temperature Compensated PSPICE™ and SABER© Electrical Models\n- Spice and SABER© Thermal Impedance Models\n• Peak Current vs Pulse Width Curve\n• UIS Rating Curve;

ONSEMI

安森美半导体