IRFP150N中文资料IRF数据手册PDF规格书
IRFP150N规格书详情
描述 Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
● Advanced Process Technology
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
产品属性
- 型号：
IRFP150N
- 功能描述：
MOSFET N-CH 100V 42A TO-247AC
- RoHS：
否
- 类别：
分离式半导体产品 >> FET - 单
- 系列：
HEXFET®
- 标准包装：
1,000
- 系列：
MESH OVERLAY™ FET
- 型：
MOSFET N 通道，金属氧化物 FET
- 特点：
逻辑电平门
- 漏极至源极电压(Vdss)：
200V 电流 - 连续漏极(Id) @ 25°
- C：
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C：
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）：
4V @ 250µA 闸电荷(Qg) @
- Vgs：
72nC @ 10V 输入电容(Ciss) @
- Vds：
1560pF @ 25V 功率 -
- 最大：
40W
- 安装类型：
通孔
- 封装/外壳：
TO-220-3 整包
- 供应商设备封装：
TO-220FP
- 包装：
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon |
23+ |
TO247 |
15500 |
英飞凌优势渠道全系列在售 |
询价 | ||
IR |
17+ |
FAX:6564815466 |
9800 |
只做全新进口原装,现货库存 |
询价 | ||
IR |
23+ |
NA |
6800 |
原装正品,力挺实单 |
询价 | ||
IR/INFINEON |
25+ |
TO-247 |
30000 |
代理全新原装现货,价格优势 |
询价 | ||
IR |
24+ |
65230 |
询价 | ||||
IR |
25+ |
TO3P |
4500 |
全新原装、诚信经营、公司现货销售 |
询价 | ||
Infineon/英飞凌 |
21+ |
TO-247(AC) |
6820 |
只做原装,质量保证 |
询价 | ||
IR |
23+ |
TO-3P |
5500 |
现货,全新原装 |
询价 | ||
IR |
24+ |
TO-3P |
5225 |
询价 | |||
IR |
24+ |
30000 |
房间原装现货特价热卖,有单详谈 |
询价 |
