IRFNL210B: Power MOSFET, N-Channel, B-FET, 200 V, 1 A, 1.5 Ω, TO-92L

这些N沟道增强型功率场效应晶体管是采用飞兆专有的、平面条形DMOS技术生产的。 这一先进技术是专为最大限度地降低通态电阻，提供卓越的开关性能，以及在雪崩击穿和换相情况下承受高能量脉冲而开发的。 这些器件非常适合于高效率的开关DC/DC转换器、开关电源、用于不间断电源的DC-AC转换器和电机控制。 •1.0 A、200 V，RDS(on) = 1.5 Ω（VGS = 10 V）\n•低栅极电荷（典型值 7.2 nC）\n•低 Crss（典型值 6.8 pF）\n•快速开关\n•100% 经过雪崩击穿测试\n•提高了 dv/dt 性能;

ONSEMI

安森美半导体

200V N-Channel MOSFET

文件：680.04 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=2.6A)

DESCRIPTION Third Generation MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straigh

文件：171.11 Kbytes 页数：6 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件：2.39965 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件：4.91599 Mbytes 页数：7 Pages

KERSEMI