P-CHANNEL POWER MOSFET

文件：23.62 Kbytes 页数：2 Pages

SEME-LAB

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

文件：508.31 Kbytes 页数：12 Pages

Samsung

三星

19A, 100V, 0.200 Ohm, P-Channel Power MOSFET

This is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching c

文件：59.73 Kbytes 页数：7 Pages

Intersil

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

文件：1.44912 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司