Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclud

文件：1.82938 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

31A, 100V, 0.077 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

文件：104.33 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Not

文件：1.00904 Mbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

iscN-Channel MOSFET Transistor

DESCRIPTION • Designed for application such as switching regulators, switching convertors, motor drivers and so on. FEATURES • Drain Current –ID= 31A@ TC=25℃ • Drain Source Voltage- : VDSS= 100V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.077Ω(Max) • SOA is power dissipati

文件：444.28 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

文件：1.78938 Mbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.76683 Mbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

31A, 100V, 0.077 Ohm, N-Channel Power MOSFET

ONSEMI

安森美半导体

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Not

文件：1.00904 Mbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

文件：196.42 Kbytes 页数：9 Pages

IRF

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ■ Lower RDS(ON) : 0.041 Ω(Typ.)

文件：256.18 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体