N-CHANNEL POWER MOSFETS

文件：354.18 Kbytes 页数：6 Pages

Samsung

三星

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ■ Lower RDS(ON) : 0.092 Ω(Typ.)

文件：262.87 Kbytes 页数：7 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

文件：373.37 Kbytes 页数：2 Pages

ISC

无锡固电

Avalanche Rugged Technology

文件：263.56 Kbytes 页数：7 Pages

Fairchild

仙童半导体