isc N-Channel MOSFET Transistor

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ISC

无锡固电

HEXFET Power MOSFET

VDSS = 100V RDS(on) = 24mΩ ID = 47A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

文件：531.52 Kbytes 页数：8 Pages

IRF

HEXFET Power MOSFET

VDSS = 100V RDS(on) = 24mΩ ID = 47A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

文件：169.9 Kbytes 页数：8 Pages

IRF

isc N-Channel MOSFET Transistor

文件：265.13 Kbytes 页数：2 Pages

ISC

无锡固电