IRFP254资料datasheet下载原装现货威世科技-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业
IRFP254	文件：162.48 Kbytes Page：6 Pages	Power MOSFET(Vdss = 250 V, Rds(on)=0.14ohm, Id=23A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •IsolatedCentralMountingHole •FastS	IRFInternational Rectifier 英飞凌英飞凌科技公司
IRFP254	文件：46.91 Kbytes Page：2 Pages	Standard Power MOSFET - N-Channel Enhancement Mode StandardPowerMOSFET N-ChannelEnhancementMode Features •Internationalstandardpackage JEDECTO-247AD •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Highcommutatingdv/dtrating •Fastswitchingtimes Applications •Switch-modeandresonant-mode po	IXYS IXYS Integrated Circuits Division
IRFP254	文件：49.56 Kbytes Page：1 Pages	High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series FEATURES: •Fastswitchingtimes •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Excellenthighvoltagestability •Lowinputcapacitance •Improvedhightemperaturereliability APPLICATIONS: •Switchingpowersupplies •Motorcontrols •AudioAmplifiers •Invert	IXYS IXYS Integrated Circuits Division
IRFP254	文件：1.37117 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude	VishayVishay Siliconix 威世科技
IRFP254	文件：67.81 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=23A@TC=25℃ •DrainSourceVoltage- :VDSS=250V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.14Ω(Max) •FastSwitching	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IRFP254	文件：621.78 Kbytes Page：2 Pages	HEXFET짰 Power MOSFET TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludetheuseofTO-220devices.TheTO-247issimilarbutsuperiortotheearlierTO-218packagebecauseofitsisolatedmoutinghole.Italsoprovidesgreatercreepagedistancebetweenpinstomee	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司
IRFP254	文件：529.06 Kbytes Page：10 Pages	Power MOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Isolatedcentralmountinghole •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf	VishayVishay Siliconix 威世科技
IRFP254	文件：1.55662 Mbytes Page：11 Pages	Power MOSFET	VishayVishay Siliconix 威世科技
IRFP254	文件：1.53406 Mbytes Page：9 Pages	Power MOSFET	VishayVishay Siliconix 威世科技
IRFP254_V02	文件：529.06 Kbytes Page：10 Pages	Power MOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Isolatedcentralmountinghole •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf	VishayVishay Siliconix 威世科技
IRFP254A	文件：247.49 Kbytes Page：7 Pages	$GYDQFHG 3RZHU 026)(7 FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=250V ♦LowRDS(ON):0.108Ω(Typ.)	IRFInternational Rectifier 英飞凌英飞凌科技公司
IRFP254A	文件：67.81 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=25A@TC=25℃ •DrainSourceVoltage- :VDSS=250V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.14Ω(Max) •FastSwitching	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IRFP254B	文件：670.77 Kbytes Page：8 Pages	250V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
IRFP254N	文件：222.26 Kbytes Page：8 Pages	Power MOSFET(Vdss=250V, Rds(on)=125mohm, Id=23A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	IRFInternational Rectifier 英飞凌英飞凌科技公司
IRFP254N	文件：159.45 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatthesePowerMOSFETsarewellknownfor,providesthedesign	VishayVishay Siliconix 威世科技
IRFP254NPBF	文件：177.22 Kbytes Page：8 Pages	HEXFET짰 Power MOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	IRFInternational Rectifier 英飞凌英飞凌科技公司
IRFP254NPBF	文件：159.45 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatthesePowerMOSFETsarewellknownfor,providesthedesign	VishayVishay Siliconix 威世科技
IRFP254PBF	文件：1.37117 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude	VishayVishay Siliconix 威世科技
IRFP254_17	文件：1.53406 Mbytes Page：9 Pages	Power MOSFET	VishayVishay Siliconix 威世科技
IRFP254_V01	文件：1.55662 Mbytes Page：11 Pages	Power MOSFET	VishayVishay Siliconix 威世科技

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详细参数

型号：
IRFP254
功能描述：
MOSFET N-Chan 250V 23 Amp
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市特顺芯科技有限公司	IRFP254	IR	06+	TO-247	2560		询价
深圳市深创辉科技有限公司	IRFP254	IR	9241		45	原装正品现货供应	询价
深圳市昌和盛利电子有限公司	IRFP254	IR	23+	TO-247	35890		询价
深圳市勤思达科技有限公司	IRFP254	IR	15+	TO-247	11560	全新原装,现货库存,长期供应	询价
深圳市星佑电子有限公司	IRFP254	SMG	05+	原厂原装	57	只做全新原装真实现货供应	询价
深圳市莱克讯科技有限公司	IRFP254	IR	2017+	TO-247	25586	深圳香港代理原装现货库存(美国-日本-台湾)可开正规增	询价
深圳好佳好科技有限公司	IRFP254	IR	1305+	TO-3P	12000	公司特价原装现货	询价
深圳市博浩通科技有限公司	IRFP254	IR	23+	TO-3P	9980	价格优势/原装现货/客户至上/欢迎广大客户来电查询	询价
鑫勃源（上海北京青岛）有限公司	IRFP254	IR	23+	管3P	18000		询价
深圳市利加科技有限公司	IRFP254	IR	16+	TO-3P	10000	全新原装现货	询价

更多IRFP254供应商更新时间2024-4-28 10:50:00

详细参数

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