IRFP240A

Advanced Power MOSFET

BVDSS=200V RDS(on)=0.18Ω ID=20A FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea LowerLeakageCurrent:10µA(Max.)@VDS=200V LowerRDS(ON):0.144Ω(Typ.)

IRFP240A

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage-:VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance:RDS(on)=0.18Ω(Max) ·FastSwitching

IRFP240B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

IRFP240FI

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=12A@TC=25℃ ·DrainSourceVoltage-:VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance:RDS(on)=0.18Ω(Max) ·FastSwitching

IRFP240PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclu

IRFP240PBF

HEXFET짰PowerMOSFET

.VDSS=200V,RDS(on)=0.18Ohm,ID=20A Lead-Free

IRFP240PBF

DynamicdV/dtRatingRepetitiveAvalancheRated

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludet

IRFP240PBF

PowerMOSFET

IRFP240R

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage-:VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance:RDS(on)=0.18Ω(Max) ·FastSwitching

IRFS240

iscN-ChannelMOSFETTransistor