Advanced Power MOSFET

BVDSS = 200 V RDS(on) = 0.18Ω ID = 20 A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA(Max.) @ VDS = 200V Lower RDS(ON) : 0.144Ω(Typ.)

文件：265.93 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage-: VDSS= 200V(Min) ·Static Drain-Source On-Resistance: RDS(on) = 0.18Ω(Max) ·Fast Switching

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ISC

无锡固电

Advanced Power MOSFET

ONSEMI

安森美半导体

Silicon planar type

文件：41.87 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Large power dissipation: PD = 1 W • Zener voltage VZ: 4.7 V to 51 V • Zener voltage allowable deviation: 10 • Auto mounting possible

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PANASONIC

松下

RF POWER TRANSISTORS NPN SILICON

文件：129.9 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉