Power MOSFET

Power MOSFET FEATURES • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity

文件：159.36 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Superfast body diode eliminates the need for external diodes in ZVS applications • Lower gate charge results in simpler drive requirements • Enhanced dV/dt capabilities offer improved ruggedness • Higher gate voltage threshold offers improved noise immunity • Material categoriza

文件：220.74 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

SMPS MOSFET

Features and Benefits • Superfast body diode eliminates the need for external diodes in ZVS applications • Lower Gate charge results in simpler drive requirements • Enhanced dV/dt capabilities offer improved ruggedness • Higher Gate voltage threshold offers improved noise immunity Applica

文件：198.47 Kbytes 页数：9 Pages

IRF

iscN-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) =0.25Ω (MAX) • Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：444.99 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

文件：226.66 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Superfast body diode eliminates the need for external diodes in ZVS applications • Lower gate charge results in simpler drive requirements • Enhanced dV/dt capabilities offer improved ruggedness • Higher gate voltage threshold offers improved noise immunity • Material categoriza

文件：220.74 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET ( VDSS = 600V , RDS(on)typ. = 210m廓 , Trr typ. = 170ns , ID = 26A )

Features and Benefits • Superfast body diode eliminates the need for external diodes in ZVS applications • Lower Gate charge results in simpler drive requirements • Enhanced dV/dt capabilities offer improved ruggedness • Higher Gate voltage threshold offers improved noise immunity • Lead-

文件：206.92 Kbytes 页数：9 Pages

IRF

Power MOSFET

Power MOSFET FEATURES • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity

文件：159.36 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：226.66 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

• Superfast body diode eliminates the need for external diodes in ZVS applications\n• Lower gate charge results in simpler drive requirements\n• Enhanced dV/dt capabilities offer improved ruggedness\n\n\nAPPLICATIONS• Zero voltage switching (SMPS)\n• Telecom and server power supplies\n• Uninterrupti;

Vishay

威世