Power MOSFET(Vdss=500V, Rds(on)typ.=0.15ohm, Id=31A)

Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamicdv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Low Trr and Soft Diode Recovery ● High Performance Optimised Anti-parallel Diode Applications ● Swit

文件：95.11 Kbytes 页数：8 Pages

IRF

iscN-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) =0.18Ω (MAX) • Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：445.34 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

文件：158.19 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：201.3 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：223.86 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：201.3 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：223.86 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：158.19 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

• Super fast body diode eliminates the need for external diodes in ZVS applications\n• Lower gate charge results in simpler drive requirements\n• Enhanced dV/dt capabilities offer improved ruggedness;

Vishay

威世

Power MOSFET(Vdss=500V, Rds(on)typ.=0.15ohm, Id=31A)

Infineon

英飞凌