Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

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IRF

isc N-Channel MOSFET Transistor

文件：67.81 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET® Power MOSFET

Infineon

英飞凌

Silicon Complementary Transistors Audio Power Amplifier, Switch

Description: The NTE241 (NPN) and NTE242 (PNP) are silicon complementary transistors in a TO220 type package designed for use in power amplifier and switching circuits.

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NTE

780- 횞 488-pixel ccd image sensor

文件：282.68 Kbytes 页数：18 Pages

TI

德州仪器

DC-DC Converters 50 to 200 Watts

Product Highlights The VI-200 family, with over 14 million units shipped, is Vicor’s broad series of “zero-current-switching” component-level DC-DC converters. Operating at frequencies up to 2 MHz, VI-200 family converters offer exceptional power density, efficiency, noise performance, reliabili

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VICOR