Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10μA (Max.) @ VDS = 200V ■ Low RDS(ON) : 0.071Ω (Typ.)

文件：256.95 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

DESCRIPTION · Designed for use in switch mode power supplies and general purpose applications. FEATURES · Drain Current –ID= 32A@ TC=25℃ · Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.085Ω(Max) · Fast Switching

文件：67.82 Kbytes 页数：2 Pages

ISC

无锡固电

ThinkiSemi 200V,32A N-Channel Planar Process Power MOSFETs

文件：2.43012 Mbytes 页数：7 Pages

THINKISEMI

思祁半导体

HIGH POWER GENERAL USE INSULATED TYPE

• IF(AV) Average forward current 250A • VRRM Repetitive peak reverse voltage 400/800/1200/1600V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, DC motor c

文件：48.78 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机

HIGH POWER GENERAL USE INSULATED TYPE

• IF(AV) Average forward current 250A • VRRM Repetitive peak reverse voltage 400/800/1200/1600V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, DC motor c

文件：48.78 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机

HIGH POWER GENERAL USE INSULATED TYPE

• IF(AV) Average forward current 250A • VRRM Repetitive peak reverse voltage 400/800/1200/1600V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, DC motor c

文件：48.78 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机