Power MOSFET(Vdss=30V, Rds(on)max=0.0028ohm, Id=210A??

SMPS MOSFET Benefits ● Low Gate Impedance to Reduce Switching Losses ● Fully Avalanche Rated ● Ultra Low On-Resistance Applications ● Synchronous Rectification ● Active ORing

文件：236.29 Kbytes 页数：8 Pages

IRF

N-Channel MOSFET Transistor

• DESCRITION • Synchronous Rectification • FEATURES • Static drain-source on-resistance: RDS(on)≤2.8mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：334.62 Kbytes 页数：2 Pages

ISC

无锡固电

30V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-247AC 封装

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

Infineon

英飞凌

HEXFET Power MOSFET

文件：219.6 Kbytes 页数：9 Pages

IRF

Synchronous Rectification

文件：220.55 Kbytes 页数：9 Pages

IRF

Synchronous Rectification

文件：220.55 Kbytes 页数：9 Pages

IRF