Power MOSFET(Vdss=100V, Rds(on)=0.025W, Id=57A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：185.43 Kbytes 页数：8 Pages

IRF

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • Fully Avalanche Rated • FEATURES • Static drain-source on-resistance: RDS(on)≤25mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：334.79 Kbytes 页数：2 Pages

ISC

无锡固电

采用 TO-247 封装的 100V 单 N 沟道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt 额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

Infineon

英飞凌

HEXFET POWER MOSFET ( VDSS = 100V , RDS(on) = 0.025廓 , ID = 57A )

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：233.93 Kbytes 页数：9 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：234.89 Kbytes 页数：9 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：234.89 Kbytes 页数：9 Pages

IRF