Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and Avalanche Voltage    and Current • Enhanced Body Diode dV/dt Capability • Compliant to RoHS Directive 2002/95/EC BENEFITS

文件：150.15 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Enhanced body diode dV/dt capability • Material categorization: for definitions of compliance ple

文件：228.65 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

iscN-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) =0.28Ω (MAX) • Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：445.29 Kbytes 页数：2 Pages

ISC

无锡固电

SMPS MOSFET

Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Enhanced Body Diode dv/dt Capability Applications • Hard Switching Primary or PFS Switch • Switch M

文件：172.39 Kbytes 页数：8 Pages

IRF

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Enhanced body diode dV/dt capability • Material categorization: for definitions of compliance ple

文件：228.65 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and Avalanche Voltage    and Current • Enhanced Body Diode dV/dt Capability • Compliant to RoHS Directive 2002/95/EC BENEFITS

文件：150.15 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Enhanced Body Diode dv/dt Capability Applications • Hard Switching Primary or PFS Switch • Switch M

文件：175.95 Kbytes 页数：8 Pages

IRF

Power MOSFET

• Low gate charge Qg results in simple drive requirement\n• Improved gate, avalanche and dynamic dV/dt ruggedness\n• Fully characterized capacitance and avalanche voltage and current;

Vishay

威世

SMPS MOSFET

Infineon

英飞凌

MOS(场效应管)

Vishay

威世