POWER MOSFET N-CHANNEL(BVdss=1000V, Rds(on)=3.5ohm, Id=3.9A)

RDS(on) 3.5Ω ID 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-establish

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IRF

Simple Drive Requirements

文件：502.49 Kbytes 页数：7 Pages

IRF

Simple Drive Requirements

文件：502.49 Kbytes 页数：7 Pages

IRF

HiRel MOSFETs

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Infineon

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